Diodes Incorporated Productos

DMT10H015LCG-13

Diodes Incorporated

MOSFET NCH 100V 9.4A 8VDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 155°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: V-DFN3333-8
• Package / Case: 8-VDFN Exposed Pad

Paquete: 8-VDFN Exposed Pad

DMN2250UFB-7B

Diodes Incorporated

MOSFET N-CH 20V 1.35A 3DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 16V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-DFN1006 (1.0x0.6)
• Package / Case: 3-UFDFN

Paquete: 3-UFDFN

ZXMP10A17E6QTA

Diodes Incorporated

MOSFET P-CH 100V 1.3A SOT23-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-26
• Package / Case: SOT-23-6

Paquete: SOT-23-6

DMN4031SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 5.2A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5.2A
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
• Power - Max: 1.42W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

APT13005DT-G1

Diodes Incorporated

TRANS NPN 450V 4A

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 450V
• Vce Saturation (Max) @ Ib, Ic: 900mV @ 1A, 4A
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
• Power - Max: 75W
• Frequency - Transition: 4MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paquete: TO-220-3

FMMT458QTA

Diodes Incorporated

TRANS NPN 400V 0.225A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 225mA
• Voltage - Collector Emitter Breakdown (Max): 400V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
• Power - Max: 500mW
• Frequency - Transition: 50MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

ZXTP717MATA

Diodes Incorporated

TRANS PNP 12V 4A 3-DFN

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 4A
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 4A
• Current - Collector Cutoff (Max): 25nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2.5A, 2V
• Power - Max: 3W
• Frequency - Transition: 110MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 3-UDFN
• Supplier Device Package: DFN2020B-3

Paquete: 3-UDFN

MMBT6427-7-F

Diodes Incorporated

TRANS NPN DARL 40V 0.5A SOT23-3

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (Max): 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 300mW
• Frequency - Transition: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

DDTB123EC-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 2.2k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

DFLZ22-7

Diodes Incorporated

DIODE ZENER 22V 1W POWERDI123

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 16V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: POWERDI?123
• Supplier Device Package: PowerDI? 123

Paquete: POWERDI?123

BZT52C15-7-F

Diodes Incorporated

DIODE ZENER 15V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 15V
• Tolerance: ±6%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10.5V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

Paquete: SOD-123

MMBZ5227B-7-F

Diodes Incorporated

DIODE ZENER 3.6V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): 24 Ohms
• Current - Reverse Leakage @ Vr: 15µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

SBR5E60P5-7D

Diodes Incorporated

DIODE SBR 60V 5A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 220µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: PowerDI? 5

B160BQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: 110pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-214AA, SMB

B340BQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AA, SMB

MMBD5004A-7

Diodes Incorporated

DIODE ARRAY GP 350V 300MA SOT23

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 350V
• Current - Average Rectified (Io) (per Diode): 300mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.275V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 360V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

Paquete: TO-236-3, SC-59, SOT-23-3

MB352

Diodes Incorporated

RECTIFIER BRIDGE 200V 35A MB

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 17.5A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: QC Terminal
• Package / Case: 4-Square, MB
• Supplier Device Package: MB

Paquete: 4-Square, MB

GBJ1004-F

Diodes Incorporated

RECT BRIDGE GPP 400V 10A GBJ

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

Paquete: 4-SIP, GBJ

AP7363-15E-13

Diodes Incorporated

IC REG LINEAR 1.5A SOT223

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

AP2125N-4.2TRG1

Diodes Incorporated

IC REG LINEAR 4.2V 300MA SOT23-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 4.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 90µA
• PSRR: 65dB (100Hz ~ 1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

AP7341D-22FS4-7

Diodes Incorporated

IC REG LINEAR 2.2V 300MA 4DFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 2.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.36V @ 150mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 50µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4

Paquete: 4-XDFN Exposed Pad

PI74FCT541TQE

Diodes Incorporated

IC BUFF/DVR 8BIT N-INV 20QSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 15mA, 64mA
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 20-QSOP

Paquete: 20-SSOP (0.154", 3.90mm Width)

TLV271IW5-7

Diodes Incorporated

IC OPAMP GP 3MHZ RRO SOT25

• Amplifier Type: CMOS
• Number of Circuits: 1
• Output Type: Rail-to-Rail
• Slew Rate: 2 V/µs
• Gain Bandwidth Product: 1.9MHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 500µV
• Current - Supply: 550µA
• Current - Output / Channel: 8mA
• Voltage - Supply, Single/Dual (±): 2.7 V ~ 16 V, ±1.35 V ~ 8 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

Paquete: SC-74A, SOT-753

PAM3101HCA400

Diodes Incorporated

IC REG LINEAR 4V 300MA SOT89-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 4V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.23V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 90µA
• Current - Supply (Max): 90µA
• PSRR: 70dB ~ 65dB (100Hz ~ 1kHz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

Paquete: TO-243AA

AP7361EA-25E-13

Diodes Incorporated

LDO CMOS HICURR SOT223 T&R 2.5K

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): 91 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-3

Paquete: -

S1GB-13-G

Diodes Incorporated

DIODE GENERAL PURPOSE SMB

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

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PI3CH400ZBEX-13R

Diodes Incorporated

BUS SWITCH 3V V-QFN3535-14 T&R 5

• Type: Bus Switch
• Circuit: 1 x 1:1
• Independent Circuits: 4
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 14-VFQFN Exposed Pad
• Supplier Device Package: 14-TQFN (3.5x3.5)

Paquete: -

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DMTH43M7LFG-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
• Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

Paquete: -

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