Página 19 - Diodes Incorporated Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Diodes Incorporated Productos - Transistores - FET, MOSFET - Simple

Registros 2.523
Página  19/91
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Paquete
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMP2004TK-7-79
Diodes Incorporated

DIODE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.97 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 16 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 230mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
20 V
430mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.97 nC @ 8 V
47 pF @ 16 V
±8V
-
230mW (Ta)
1.1Ohm @ 430mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMN2310U-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 480mW (Ta)
  • Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
20 V
1.6A (Ta)
1.8V, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
38 pF @ 10 V
±8V
-
480mW (Ta)
175mOhm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMT10H003SPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
100 V
152A (Tc)
6V, 10V
4V @ 250µA
85 nC @ 10 V
5542 pF @ 50 V
±20V
-
2.2W (Ta), 139W (Tc)
3mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
DMN62D1LFDQ-7
Diodes Incorporated

MOSFET N-CH 60V 400MA 3DFN T&R 3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN1212-3 (Type C)
  • Package / Case: 3-PowerUDFN
Paquete: -
En existencias9.090
MOSFET (Metal Oxide)
60 V
400mA (Ta)
1.5V, 4V
1V @ 250µA
0.55 nC @ 4.5 V
36 pF @ 25 V
±20V
-
500mW
2Ohm @ 100mA, 4V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN1212-3 (Type C)
3-PowerUDFN
DMP3013SFV-7
Diodes Incorporated

MOSFET P-CH 30V 12A PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 940mW (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8 (Type UX)
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias212.214
MOSFET (Metal Oxide)
30 V
12A (Ta), 35A (Tc)
4.5V, 10V
3V @ 250µA
33.7 nC @ 10 V
1674 pF @ 15 V
±25V
-
940mW (Ta)
9.5mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8 (Type UX)
8-PowerVDFN
DMPH4029LFGQ-7
Diodes Incorporated

MOSFET P-CH 40V 8A/22A PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
Paquete: -
En existencias7.050
MOSFET (Metal Oxide)
40 V
8A (Ta), 22A (Tc)
4.5V, 10V
3V @ 250µA
34 nC @ 10 V
1626 pF @ 20 V
±20V
-
1.2W (Ta)
29mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMT8008SPS-13
Diodes Incorporated

MOSFET N-CH 80V 83A PWRDI5060-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
80 V
83A (Tc)
6V, 10V
4V @ 1mA
34 nC @ 10 V
1950 pF @ 40 V
±20V
-
1.3W (Ta), 83W (Tc)
7.8mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
BSS138K-7
Diodes Incorporated

MOSFET N-CH 50V SOT23 T&R 3K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380mW
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias30.177
MOSFET (Metal Oxide)
50 V
310mA (Ta)
10V
1.5V @ 250µA
0.95 nC @ 10 V
23.2 pF @ 25 V
±20V
-
380mW
3.5Ohm @ 220mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN2990UFB-7B
Diodes Incorporated

MOSFET N-CH 20V 780MA 3DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250A
  • Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 520mW (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DFN1006-3
  • Package / Case: 3-UFDFN
Paquete: -
En existencias30.000
MOSFET (Metal Oxide)
20 V
780mA (Ta)
1.8V, 4.5V
1V @ 250A
0.41 nC @ 4.5 V
31 pF @ 15 V
±8V
-
520mW (Ta)
990mOhm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1006-3
3-UFDFN
DMP6350SQ-7
Diodes Incorporated

MOSFET P-CH 60V 1.5A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 720mW
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias22.131
MOSFET (Metal Oxide)
60 V
1.5A (Ta)
4.5V, 10V
3V @ 250µA
4.1 nC @ 10 V
206 pF @ 30 V
±20V
-
720mW
350mOhm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN3732U-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 0.95V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 420mW
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
30 V
1A (Ta)
1.8V, 4.5V
0.95V @ 250µA
0.9 nC @ 4.5 V
40.8 pF @ 25 V
±8V
-
420mW
460mOhm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH15H053SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 814 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
150 V
25A (Tc)
10V
4V @ 250µA
11.5 nC @ 10 V
814 pF @ 75 V
±20V
-
2.3W (Ta), 107W (Tc)
66mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMPH6250S-7
Diodes Incorporated

MOSFET P-CH 60V 2.4A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
60 V
2.4A (Ta)
4.5V, 10V
3V @ 250µA
8.3 nC @ 10 V
512 pF @ 30 V
±20V
-
920mW
155mOhm @ 2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN1014UFDF-7
Diodes Incorporated

MOSFET N-CH 12V 8A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
12 V
8A (Ta)
2.5V, 4.5V
1V @ 250µA
6.4 nC @ 4.5 V
515 pF @ 6 V
±8V
-
700mW (Ta)
16mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMN24H11DSQ-7
Diodes Incorporated

MOSFET N-CH 240V 270MA SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240 V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 76.8 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 11Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
En existencias13.890
MOSFET (Metal Oxide)
240 V
270mA (Ta)
4.5V, 10V
3V @ 250µA
3.7 nC @ 10 V
76.8 pF @ 25 V
±20V
-
750mW (Ta)
11Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH62M7SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4973 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Paquete: -
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MOSFET (Metal Oxide)
60 V
170A (Tc)
10V
4V @ 250µA
68.7 nC @ 10 V
4973 pF @ 30 V
±20V
-
3W (Ta), 150W (Tc)
2.7mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMNH6069SFVW-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
60 V
5A (Ta), 18A (Tc)
4.5V, 10V
3V @ 250µA
14 nC @ 10 V
740 pF @ 30 V
±20V
-
3W (Ta)
50mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN1003UFDE-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-PowerUDFN
Paquete: -
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MOSFET (Metal Oxide)
12 V
22A (Ta)
2.5V, 4.5V
1V @ 250µA
45 nC @ 8 V
2551 pF @ 6 V
±8V
-
800mW (Ta)
3mOhm @ 15A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
DMT6009LJ3
Diodes Incorporated

MOSFET N-CH 60V 74.5A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 74.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta), 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (Type TH)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: -
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MOSFET (Metal Oxide)
60 V
74.5A (Tc)
4.5V, 10V
2V @ 250µA
33.5 nC @ 10 V
1925 pF @ 30 V
±16V
-
2.9W (Ta), 83.3W (Tc)
10mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (Type TH)
TO-251-3 Short Leads, IPak, TO-251AA
DMT6006SPS-13
Diodes Incorporated

MOSFET N-CH 60V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.45W (Ta), 89.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paquete: -
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MOSFET (Metal Oxide)
60 V
16.2A (Ta), 98A (Tc)
10V
4V @ 250µA
27.9 nC @ 10 V
1721 pF @ 30 V
±20V
-
2.45W (Ta), 89.3W (Tc)
6.2mOhm @ 10.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMTH10H072LPS-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 51.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
Paquete: -
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MOSFET (Metal Oxide)
100 V
20A (Tc)
4.5V, 10V
3V @ 250µA
5.1 nC @ 10 V
266 pF @ 50 V
±20V
-
1.5W (Ta), 51.7W (Tc)
57mOhm @ 4.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMT3009UFVW-13
Diodes Incorporated

MOSFET N-CH 30V 10.6A/30A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paquete: -
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MOSFET (Metal Oxide)
30 V
10.6A (Ta), 30A (Tc)
4.5V, 10V
1.8V @ 250µA
7.4 nC @ 10 V
894 pF @ 15 V
±12V
-
1.2W (Ta), 2.6W (Tc)
11mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN2310UW-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 450mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
Paquete: -
En existencias7.032
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
1.8V, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
38 pF @ 10 V
±8V
-
450mW (Ta)
200mOhm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMN2310UT-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 290mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
Paquete: -
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MOSFET (Metal Oxide)
20 V
1.2A (Ta)
1.8V, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
38 pF @ 10 V
±8V
-
290mW (Ta)
240mOhm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMTH6016LFVWQ-13-A
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.17W (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
Paquete: -
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MOSFET (Metal Oxide)
60 V
41A (Tc)
4.5V, 10V
2.5V @ 250µA
15.1 nC @ 10 V
939 pF @ 30 V
±20V
-
1.17W (Ta)
16mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMTH84M1SPSQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4209 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
Paquete: -
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MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
4V @ 250µA
63 nC @ 10 V
4209 pF @ 40 V
±20V
-
1.6W (Ta)
4mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMTH4002SCTB-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V TO263 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paquete: -
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MOSFET (Metal Oxide)
40 V
192A (Tc)
10V
4V @ 250µA
77.5 nC @ 10 V
7180 pF @ 20 V
±20V
-
6W (Ta), 166.7W (Tc)
3mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263AB (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP510DLQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 196mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520mW (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5Ohm @ 100mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: -
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MOSFET (Metal Oxide)
50 V
196mA (Ta)
5V
2V @ 1mA
0.5 nC @ 10 V
40 pF @ 25 V
±30V
-
520mW (Ta)
9.5Ohm @ 100mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3